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| TOPLED(R) RG Super-Bright, Hyper-Red GaAIAs-LED LH T774 Besondere Merkmale q q q q q q q q Features q q q q q q q q color of package: white double heterojunction in GaAIAs technology superior luminous intensity for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and soldering methods available taped on reel (12 mm tape) load dump resistant acc. to DIN 40839 Typ Type Emissions- Farbe der farbe Lichtaustrittsflache Color of Color of the Emission Light Emitting Area colorless clear Lichtstarke Lichtstrom Bestellnummer Luminous Intensity IF = 10 mA IV (mcd) 6.3 10.0 16.0 10.0 ... ... ... ... 32 20 32 50 Luminous Flux IF = 10 mA V (mlm) 45 (typ.) 75 (typ.) - Ordering Code LH T774-KM hyper-red LH T774-L LH T774-M LH T774-LN Q62703-Q2725 Q62703-Q2790 Q62703-Q2791 Q62703-Q2792 Streuung der Lichtstarke in einer Verpackungseinheit IV max / IV min 2.0. Luminous intensity ratio in one packaging unit IV max / IV min 2.0. Semiconductor Group 1 11.96 VPL06899 Gehausefarbe: wei Doppel-Heterostruktur in GaAlAs Technologie besonders hohe Lichtstarke als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung fur alle SMT-Bestuck- und Lottechniken geeignet gegurtet (12-mm-Filmgurt) Storimpulsfest nach DIN 40839 LH T774 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspannung Reverse voltage Verlustleistung Power dissipation TA 25 C Warmewiderstand Thermal resistance Sperrschicht / Luft Junction / air Montage auf PC-Board*) (Padgroe je 16 mm2) mounted on PC-Board*) (pad size 16 mm2 each) *) PC-board: FR4 Symbol Symbol Werte Values - 55 ... + 100 - 55 ... + 100 + 100 30 0.5 Einheit Unit C C C mA A Top Tstg Tj IF IFM VR Ptot 3 90 V mW Rth JA 400 K/W Semiconductor Group 2 LH T774 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 10 mA Dominantwellenlange Dominant wavelength IF = 10 mA Spektrale Bandbreite bei 50 % Irel max Spectral bandwidth at 50 % Irel max IF = 10 mA Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % IV Durchlaspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 3 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tP = 10 s, RL = 50 Symbol Symbol (typ.) peak (typ.) (typ.) dom (typ.) (typ.) (typ.) 2 (typ.) VF (max.) VF (typ.) IR (max.) IR (typ.) C0 Werte Values 660 Einheit Unit nm 645 nm 22 nm 120 1.75 2.6 0.01 10 25 Grad deg. V V A A pF (typ.) tr (typ.) tf 140 110 ns ns Semiconductor Group 3 LH T774 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 10 mA Relative spectral emission V () = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel = f () Radiation characteristic Semiconductor Group 4 LH T774 Durchlastrom IF = f (VF) Forward current TA = 25 C Relative Lichtstarke IV/IV(10 mA) = f (IF) Relative luminous intensity TA = 25 C Zulassige Impulsbelastbarkeit IF = f (tP) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) Semiconductor Group 5 LH T774 Wellenlange der Strahlung peak = f (TA) Wavelength at peak emission IF = 10 mA Dominantwellenlange dom = f (TA) Dominant wavelength IF = 10 mA Durchlaspannung VF = f (TA) Forward voltage IF = 10 mA Relative Lichtstarke IV/IV(25 C) = f (TA) Relative luminous intensity IF = 10 mA Semiconductor Group 6 LH T774 Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) Kathodenkennzeichnung: Cathode mark: abgeschragte Ecke bevelled edge Semiconductor Group 7 GPL06899 |
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